Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier ...

In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifeti...

The metal-insulator-semiconductor (MIS) diode is the most useful device in the study of semiconductor surfaces. The current-voltage data of the metal-insulatorsemiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the interfacial layer parameters. The calculated current–voltage data are fitted into ideal thermionic emission diffusion equation...

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The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height ( ), ideali...

The possible application of Schottky diodes as detector elements in receivers and image sensing systems operating in the THz frequency range has been demonstrated in the literature. In addition to metal-semiconductor (M-S) Schottky diodes, the use of heterojunction Schottky barrier diodes for detection and mixing applications has also been explored. Such diodes require lower d.c. bias voltages,...

The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by current­voltage (I­V), capacitance­voltage­frequency (C­V­f ) and conductance­voltage­frequency (G­V­f ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (I­V)/0.79 eV (C­V) and 1.24, respectively. As well, t...

The current-voltage characteristics for Au/n-Si Schottky diode are generated by simulation. The simulation performed using Newton-Raphson iteration method yields current-voltage characteristics over wide temperature range. The data is analyzed using TDE-mechanism to study the temperature dependence of barrier height and ideality factor. Results obtained from simulation studies show the barrier ...