نتایج جستجو برای: semiconductor device testing

تعداد نتایج: 1029873  

Journal: :VESTNIK of the Samara State Aerospace University 2014

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه پیام نور 1384

چکیده ندارد.

2003
Leon M. Tolbert Burak Ozpineci S. Kamrul Islam Madhu S. Chinthavali

Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many utility applications of power electronics are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To o...

2006
Yiming Li Cheng-Kai Chen

In this paper, a distributed simulation-based computational intelligence algorithm for inverse problem of nanoscale semiconductor device is presented. This approach features a simulation-based optimization strategy, and mainly integrates the semiconductor process simulation, semiconductor device simulation, evolutionary strategy, and empirical knowledge on a distributed computing environment. F...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه رازی - دانشکده علوم 1387

boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...

2014
Olivia Bluder Kathrin Plankensteiner Michael Nelhiebel Walther Heinz Christian Leitner

In this study, fatigue life of power semiconductor devices measured in cycles to failure during an accelerated stress test in a climate chamber is analyzed. The tested devices fail mainly in a short circuit event and their physical inspection reveals cracks in the power metallization. Commonly, the time till fracture of macroscopic metal layers is modeled with S-N or ε-N fields, this means that...

2016
Mingfang Liu Lin Yu Xia Han

To further grasp the voltage-current characteristics for ignition device of semiconductor bridge and accordingly guide the actual application, the voltage-current characteristics for the bridge body of ignition device of semiconductor bridge are tested in the paper. Firstly, introduce the principle of SCB circuit and provide the connection circuit, device elements to be used and symbolic expres...

2016
Mingfang Liu Lin Yu Xia Han

The emergence of ignition device of semiconductor bridge provides a way to resolve the conflict between low energy and high promptness, reliability and safety of initiating explosive device. But with the rapid development of arms and ammunition, the higher demand of miniaturization for structure and volume in design of initiating explosive device is put forward based on high safety, reliability...

A. Adibi, MJ SHARIFI

In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as Poisson, Lap lace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in sever...

2008
David Miller

Electronic communications devices that operate in environments with a high level of electromagnetic noise require special consideration and testing to ensure the continuous delivery of uncorrupted data. Communication devices are susceptible to data interruption and corruption in industrial, automotive, telecommunication, medical and test lab environments, to name just a few. Demonstrating compl...

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