The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive device scaling in future CMOS technology nodes. Two structures that combine strain engineering an...

We show that strain, arising from the mismatch between Si and SiO2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si /SiO2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastical...

The complex and nano-structured amorphous carbon as p-type films prepared from natural palm oil precursor for heterojunction solar cell were presented. Field-emission scanning electron microscopy (FESEM) revealed the nano structured films had particle size in the range of 28 to 34 nm. The energy-dispersive spectroscopy (EDS) showed the existing of carbon in complex-structured amorphous carbon f...

In this work, shapes and shape transitions of several types of self-assembled heteroepitaxial nanostructures, as observed in in situ scanning tunneling microscopy experiments during growth, are examined in the framework of several equilibrium and kinetic models. In particular, heteroepitaxial TiSi2 and CoSi2 islands on Si(111) are shown to behave in accordance with generalized Wulff–Kaishew the...

We propose an array of submicrometer mirrors to assess luminescent nano-objects. Micromirror arrays (MMAs) are fabricated on Si (001) wafers via selectively doping Ga using the focused ion beam technique to form p-type etch stop regions, subsequent anisotropic chemical etching, and Al deposition. MMAs provide two benefits: reflection of luminescence from nano-objects within MMAs toward the Si (...

The in-plane transport properties of a strained ( 100) Si layer on a relaxed Sii -XGe, substrate are studied with an ensemble Monte Carlo technique. Similar velocity (-field) characteristics are found for strained Si with any valley splitting energy AE)O. 1 eV. These phonon-limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm’/v s at 77 K. There is only a slight increase in th...

PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enh...

The measurement of the density of two-dimensional islands by scanning tunneling microscopy after submonolayer growth is used to determine the strain dependence of surface diffusion. Templates of strained and relaxed Ge surfaces with the same surface reconstruction are prepared for comparison. The diffusion barrier for Ge and Si adatoms is found to increase with increasing compressive strain of ...

The need for high speed and density in the modem semiconductor industry requires new channel materials and techniques for improved carrier transport and continuous scaling of the device dimensions. As a material for enhanced hole transport strained-Ge is implemented in this work. High-k dielectric and metal gate stack is used for improved electrostatic control, as an alternative to the unstable...