In this paper we analyze threshold voltage and body coefficient (Υ) on varying the oxide thickness in CNTFET. Simulation analysis of drain current and drain voltage characteristic is discussed and found that due to decreasing nature of quantum capacitance in CNTFET, the factor (Υ) has still impact on device and it is not negligible in deep nano regime. We also observed from simulation on nanohu...

The mfluence of optical radlatlon on the MOSFET threshold voltage has been mvestlgated theoretically as well as experimentally For conventlonal MOSFETs the influence 1s neghglble, but for open-gate FET-based sensors, such as the ISFET, optIcal radiation can cause a considerable threshold voltage shift An explanation of the threshold voltage shrft due to lllummatlon 1s given, based on the analys...

This paper presents the application of floating-gate MOSFET (FGMOS) in the design of low voltage and high speed digital circuits wherein threshold voltage tunability of FGMOS has been exploited to enhance the performance of inverter in terms of various parameters like switching threshold voltage, noise margins, propagation delay and energy delay product. It has been observed that by varying the...

In this paper a new SRAM cell is designed with a body bias controller to control leakage, speed and stability. A novel controller circuit is proposed to control the value of threshold voltage. Operation of the proposed controller is based on word line signal levels. In order to reduce sub threshold leakage current, the NMOS access and driver transistor is adjusted to a higher threshold voltage....

A new definition of MOSFET threshold voltage is proposed, namely, the “critical-current at linear-threshold” method, which has a unique solution and is very simple to measure. This definition gives consistent values of threshold voltage for different regions of operation at long channel, and contains the information on short-channel effects at short channel, which is very useful for deep-submic...

We have discovered a voltage threshold for permeation through a synthetic nanopore of dsDNA bound to a restriction enzyme that depends on the sequence. Molecular dynamic simulations reveal that the threshold is associated with a nanonewton force required to rupture the DNA-protein complex. A single mutation in the recognition site for the restriction enzyme, i.e., a single nucleotide polymorphi...

A three-dimensional (3-D) “atomistic” simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 m MOSFET’s is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single mul...

Semiconductor supply chain is increasingly getting exposed to variety of security attacks such as Trojan insertion, cloning, counterfeiting, reverse engineering (RE), piracy of Intellectual Property (IP) or Integrated Circuit (IC) and side-channel analysis due to involvement of untrusted parties. In this paper, we propose transistor threshold voltage-defined switches to camouflage the logic gat...