نتایج جستجو برای: unilateral transistor model
تعداد نتایج: 2155669 فیلتر نتایج به سال:
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
As MOS devices scale to submicron lengths, short-channel effects become more pronounced, and an improved transistor model becomes a necessary tool for the VLSI designer [10]. We present a simple, physically based charge-controlled model. The current in the MOS transistor is described in terms of the mobile charge in the channel, and incorporates the physical processes of drift and diffusion. Th...
The exponential growth in wireless systems require rapid prototyping of radio frequency circuits (RF) using computer-aided design (CAD) enabled models. Most of the RF circuits (e.g. switches, amplifiers, mixers, etc.) use transistors as their active component for a variety of key functions. This thesis deals with application-oriented empirical modeling of high electron mobility transistors (HEM...
We numerically investigate the possibility of using Tunnel field-effect transistor (TFET) in a 32 kHz crystal oscillator circuit to reduce power consumption. A simulation using SPICE (Simulation Program with Integrated Circuit Emphasis) is carried out based on a conventional CMOS transistor model. It is shown that the power consumption of TFET is one-tenth that of conventional low-power CMOS.
The release of dense-core vesicles in bovine chromaffin cells is a model for the presynaptic process in neurons. It is usually studied by microamperometry of catecholamines with carbon fibers. Here we introduce transistor recording as a tool to study vesicle release. When we stimulate a chromaffin cell placed on a field-effect transistor, the gate voltage exhibits peaks that correlate with a si...
An active antenna for transmitter application in S frequency band is designed and analyzed using harmonic balance technique which is based on the nonlinear model of active devices. In this active antenna, the amplifier is integrated with the radiator which is a rectangular patch antenna. This patch antenna is analyzed employing full-wave momentum method. By applying nonlinear model of transisto...
This paper is based on analysis of a common source - common gate low noise transconductance amplifier (CS-CG LNTA). Conventional noise analyses equations are modified by considering to the low output impedance of the sub-micron transistors and also, parasitic gate-source capacitance. The calculated equations are more accurate than calculated equations in other works. Also, analyses show that th...
A comprehensive summary and analysis of the electronic noise affecting the resolution of X-ray, γ-ray and particle counting spectroscopic systems which employ semiconductor detectors and charge sensitive preamplifiers is presented. The noise arising from the input transistor of the preamplifier and its contribution to the total noise is examined. A model for computing the noise arising from the...
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