The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexago...

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...

The electronic and magnetic properties of the hypothetical compounds of MC (M=Al, Ga and In) are investigated by using first-principle calculations and pseudopotential plane wave self-consistent field method based on density functional theory. In order to find the most stable phase of MC (M=Al, Ga and In), we study them in zinc-blende (ZB), rocksalt (RS), wurtzite and NiAs crystal structures. W...

The spatial strain distribution in and around a single axial InAs 1-x Px hetero-segment in an InAs nanowire was analyzed using nano-focused X-ray diffraction. In connection with finite-element-method simulations a detailed quantitative picture of the nanowire's inhomogeneous strain state was achieved. This allows for a detailed understanding of how the variation of the nanowire's and hetero-seg...

A simple theoretical study of the linear electro-optic effect is presented. This semiclassical approach is based on the single-energy-gap model, the dielectric theory and the concepts of bond charge and effective ionic charge. A general expression is obtained for the electro-optic coefficient of a crystal and is applied to a wide variety of diatomic and ternary compounds including zincblende (G...

Anisotropic growth in nanomaterials can lead to many interesting growth morphologies. This is especially true when the crystal structure contains anisotropy not only due to different surface plane energies but also due to surface polarity and/or chemical activity. Such is the case with wurtzite ZnS. This feature article covers the ZnS one-dimensional nanostructures that have been synthesized by...

We have experimentally studied the birefringence of wurtzite GaN grown on a sapphire substrate. The measurements were done with single-mode GaN/AlGaN planar optical waveguides on c-plane grown heterostructure films. The refractive indices were found to be different for signal optical field perpendicular or parallel to the crystal c axis (n'Þn i). More importantly, we found an approximately 10% ...