High-quality ZrB2 thin films have been deposited at substrate temperatures as low as 300 °C by a new method: remote hydrogen-plasma chemical vapor deposition from the single-source precursor Zr(BH4)4 . Carrying out the deposition in the presence of atomic hydrogen generates films with properties that are far superior to those deposited by purely thermal methods; the latter are boron-rich, oxidi...

A novel conductive ceramic/graphene nanocomposite is prepared to prohibit the re-stacking of reduced graphene oxide (RGO) by wedging zirconium diboride (ZrB2) nanoparticles (NPs) into multiple layer nanosheets using a simple solvothermal method. Surprisingly, the RGO/ZrB2 nanocomposite supported Pt NPs shows very excellent catalytic activity. Its electrochemical surface area (ECSA) is up to 148...

Transition metal diborides in hexagonal AlB2 type structure typically form stable MB2 phases for group IV elements (M  =  Ti, Zr, Hf). For group V (M  =  V, Nb, Ta) and group VI (M  =  Cr, Mo, W) the stability is reduced and an alternative hexagonal rhombohedral MB2 structure becomes more stable. In this work we investigate the effect of vacancies on the B-site in hexagonal MB2 and its influenc...

Ceramics based on group IV-V transition metal borides and carbides possess melting points above 3000 °C, are ablation resistant and are, therefore, candidates for the design of components of next generation space vehicles, rocket nozzle inserts, and nose cones or leading edges for hypersonic aerospace vehicles. As such, they will have to bear high thermo-mechanical loads, which makes strength a...

The ZrB2–MoSi2–AlN, ZrB2–SiC–AlN, and (Ti, Cr)B2–AlN ceramic composites were wetted with a nickel-based alloy in the Ni–Cr–W–Mo system. was found to wet well form contact angles θ = 0–12° for 3–7 min on their surface. wetting process less influenced by composition of main phase (ZrB2 Cr)B2) greater content SiC AlN dielectric additions, impairing composites. interaction areas studied cross-secti...