In this paper we discuss primitives for mobilising code and communications. We distinguish three types of semantics for mobility: copying (where an identical copy is created remotely), moving (where the original is destroyed), and borrowing (where the original is moved to the target and back to where it came from at defined moments). We discuss these semantics for mobile code and mobile channel...

This paper re-considers some of the evidence for low and declining social mobility in Britain, showing that one study based on a re-analysis of cohort figures appears to have had an impact on policy-makers out of all proportion to its scale and rigour. The study claimed to show that the income of parents and children were more closely related for sons born in 1970 than in 1958, and that therefo...

The dependence of the electron mobility on the longitudinal electric field in MOSFETs has been studied in detail. To do so, a Monte Carlo simulation of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations, has been developed. A simplified description of the silicon band structur...

The influence of interface electron scattering on electron mobility in semiconducting quantum wells is analyzed theoretically in the Born approximation. The interface roughness is assumed to be random self-affine fractal characterized by roughness exponent H, correlation length x, and rms amplitude D. In particular, the ratio of electron mobilities for the Fermi level slightly above and below t...

Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impurities, and holes, and including the 2D electron gas screening for all mentioned scattering mechan...

For the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 cm2N-sec at an electron carrier density (ne) of 1.6~10’2 cm2 was obtained. At 250 mK, the mobility increases to 13,313 cm2N-sec (ne=1.33~10’2 cm-2) and Shubnikov-de Haas oscillations appear, showing excellent confi...

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 ...

Stress induced enhancement of electron mobility has primarily been attributed to the splitting of the conduction bands. However, experiments [1] have indicated that the mobility enhancement cannot solely be attributed to this effect, and a recent study has shown that a stress along the 〈110〉 direction leads to a change of the effective mass [2]. This work investigates the effect of the variatio...

Utilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs) is greater than electron mobility. The room temperature acoustically limited hole mobility for the SiNWs considered can be as high as 2500 cm2/V s, which is nearly three times larger than the bulk acoustically limit...