Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) a hybrid optical metrology study for fast non-destructive detection, classification, characterisation defects 4H–SiC homoepitaxial layers on substrates. Ellipsomet...

We characterized two samples consisting of photoresist layers on silicon with square arrays of square holes by spectroscopic ellipsometry (SE) and Mueller matrix polarimetry (MMP). Hole lateral dimensions and depths were determined by fitting either SE data taken in conventional planar geometry or MMP data in general conical diffraction configurations. A method for objective determination of th...

This thesis presents a new interferometric technique for the measurement of ellipsometric information by the means of classical ghost imaging. The technique relies on the use of light from a classical, spatially incoherent source with Gaussian statistics. The standard ghost-imaging configuration is modified for reflection measurements and polarizers are added to control the state of polarizatio...