The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the ...

This paper presents a device proposal based on a junction between an absorbing semiconductor nanorod structure and another window semiconductor layer for solar cell application. The possibility of band gap tuning by varying the diameter of the nanorods along the length, higher absorption coefficient at nanodimensions, the presence of a strong electrical field at the nanorod-window semiconductor...

Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subth...

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A model for the simulation of the electron energy distribution in nanoscale metal–oxide–semiconductor field-effect transistor (MOSFET) devices, using a kinetic simulation technique, is implemented. The convective scheme (CS), a method of characteristics, is an accurate method of solving the Boltzmann transport equation, a nonlinear integrodifferential equation, for the distribution of electrons...

In advanced microsystems various types of devices (metal-oxide semiconductor field-effect transistors, bipolar transistors, sensors, actuators, microelectromechanical systems, lasers) may be on the same chip, some of which are 3D structures in nature. Therefore, not only materials combinations (integrated materials) are required for optimal device performance of each type but also process techn...

This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n ...

The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This paper presents the design, synthesis, optical and electrochemical characterization, crystal packing, modeling and thin film morphology, and organic thin film field effect transistor (OTFT) device data analysis for a novel 2,...

Carbon nanotubes field effect transistors (CNTFETs) are one of the most promising candidates for future nanoelectronics. In this paper, the review of CNTFETs is presented. The structure, operation and the characteristics of carbon nanotubes metal-insulator-semiconductor capacitors have been discussed. The operation and dc characteristics of CNTFETs have been presented. In future, we expect the ...