This paper presents the preliminary results of an investigation of the effect of the recess geometry on the breakdown characteristics of a GaAs MESFET. It is found that the angle of the recess may affect the the gate-drain breakdown voltage of the device, shallower angles performing better than sharper angles. Placing the gate contact towards the source end of the recess has also been found to ...

In the previous chapter the work is done using one dimensional Poisson’s equation. The work is extended in order to develop better understanding aspects of the submicronic device to be used as PD. The chapter starts with discussion on the existing theoretical models and their limitations which stimulate to propose the new physics based 2D model. The chapter is divided into four sections. Sectio...

The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of t...

Due to the proximity of military and civilian bands at the relevant frequencies low frequency radar and EW systems needs amplifiers which combine a broadband coverage, a high output power and efficiency with a good linearity. The wide bandgap semiconductors SiC and GaN offer an impressive RF and microwave power-frequency capability [1] but relatively few SiC transistor amplifiers have been desi...

We present a novel GaAs metal–semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29; 6, 5, 7; 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effective-potential-barrier height. We demonstrate that, by using the InGaP/GaAs MQB capping layer, the gate Schottky barrier performance and gate...

This paper describes the simulations performed in order to evaluate expected performance of the voltage-controlled oscillator (VCO) based on differential ring oscillator with SCFL delay cells in 0.5μm GaAs MESFET technology. The ring oscillator structures with buffer cells are also simulated. The frequency range and tuning sensitivity are extracted. Finally, jitter simulations are performed in ...

This paper discusses a novel technique to extract small signal equivalent circuit model parameters of GaAs MESFET device based on particle swarm optimization (PSO) technique. Three different variants of PSO namely basic PSO, Delta well quantum PSO (DQPSO) and Harmonic well quantum PSO (HQPSO) are implemented and compared. We find that these techniques extract the 16-element small signal model p...

In this paper we use a generalized radial basis function (GRBF) network to model the intermodulation properties of microwave GaAs MESFET transistors under dynamic operation. The proposed model receives as input the bias voltages of the transistor and provides as output the derivatives of the drain-to-source current, which are responsible for the intermodulation properties. The GRBF network is a...