INTRODUCTION This is the second in a series of application notes that define the fundamental behavior of MOSFETs, both as standalone devices and as switching devices implemented in a Switch Mode Power Supply (SMPS). The first application note (1) provided a basic description of the MOSFET and the terminology behind the device, including definitions and physical structure. This application note ...

Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant MOSFET topology that encompasses discrete MOS power switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popular...

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current due to influences of processes variations becomes a serious problem. Random dopant fluctuation is one of the problems. In this work, we numerically examine the fluctuation effects of r...

Lowering both the threshold voltage (Vth) and subthreshold swing (S) at the same time is essentially required for O.1pm and below O.lym MOSFETs with low supply voltage. In this paper, we discuss a temperature scaling concept of MOSFET and the device characteristics of the fabricated 77K MOSFETs. In the temperature scaling concept, the physical quantities relating to potential are scaled with op...

JIN, YAWEI. Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device. (Under the direction of Dr. D. W. Barlage). Practical realization of low-power, high-speed transistor technologies for future generation nano-electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials, such a...

The accuracy of a MOSFET dosimetry system with respect to peripheral therapeutic doses from high-energy X-rays has been evaluated. The results have been compared with ionisation chamber measurements in the same peripheral regions of the beam. For 6 MV and 18 MV X-ray beams, the MOSFET system in the high-sensitivity mode produces reproducibility of dose measurement with relative standard deviati...

Intrinsic parameter fluctuations on device characteristic and yield are crucial in determining the operation of nanoscale semiconductor devices. In this paper, we examine the fluctuations of the threshold voltage (Vth), gate capacitance (Cg), and cutoff frequency (FT) of emerging metal/high-κ gate planar complementary metal-oxidesemiconductor (CMOS) field effect transistors (FETs) variability i...

A reliable configuration for triggering a series string of power metal oxide semiconductor (MOS) devices without the use of transformer coupling is presented. A capacitor is inserted between the gate and ground of each metal oxide semiconductor field effect transistor (MOSFET), except for the bottom MOSFET in the stack. Using a single input voltage signal to trigger the bottom MOSFET, a voltage...

Optical and electronic devices for optoelectronic integrated circuits have been extensively studied, and now, more efforts for the conversion between optical and electrical signals are accordingly required. In this work, a silicon (Si)-compatible optically drivable III-V-on-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is studied by simulation. The proposed optoelectronic device...

For SOI nMOSFET, the impact of high tensile stress contact etch stop layer (CESL) on device performance and reliability was investigated. In this work, device driving capability can be enhanced with thicker CESL, larger LOD and narrower gate width. With electrical and body potential inspection, serious device’s degradation happened on SOI-MOSFET with narrow gate device because of STI-induced ed...