Recently, it was shown that materials with certain crystal structures can exhibit multifold band crossings large topological charges. CoSi is one such material belongs to non-centrosymmetric space group P213 (#198) and posseses crossing points a charge of 4. The change symmetry, e.g., by means external stress, lift the degeneracy its properties. In present work, influence uniaxial deformation o...

Discrete NiSi nanocrystals were synthesized by rapid thermal oxygen annealing of very thin Si/Ni/Si films on a SiO2 tunneling layer. They were used to fabricate metal–oxide–semiconductor capacitor memory. Electrical properties of the memory device such as programming, erasing and retention were characterized and good performance was achieved.

In this paper, we propose and simulate a multifunctional transistor that exhibits device reconfigurability realizes both nFET pFET electrical characteristics when adequately biased. The use of will significantly reduce the count in realizing sequential combinational circuits result highly compact design. uses dual fin structure having single mid-gap workfunction gate ( $\sim $ 4.65 eV) alongsid...

A transferable tight-binding parametrization of the Ni–Si interactions, from small binary Ni Si clusters to bulk NiSi , m n 2 Ž . is presented within a minimal parameter basis. The data base for fitting the parameters is obtained from i ab initio results for the NiSi dimer obtained using the density functional method and the single, double and triple coupled clusters method, Ž . and ii band str...