Fast reliability testing is a key point for IlI-V technologies. This is particularly true when modifications have to be implemented on the production line. Such modifications can be soned in four categories: raw material, new equipment, prncess slep and design rule modifications. Endurance tests have to be performed to ensure that through the modified steps the reliability of the technology has...

This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on GaAs 150-nm pseudomorphic HEMT (pHEMT) technology Qorvo. For output combiner, wideband approach, embedding capacitance active devices in is applied. A state-of-the-art bandwidth 4 GHz achieved: 21–25-GHz range, above 29.5 dBm, with an associated added efficiency (PAE) higher than 3...

This paper presents a GaAs-based Ka-band low noise amplifier (LNA) with gain flatness enhancement. Active device optimization and inductive degeneration techniques were employed to obtain figure (NF) good input/output return loss. In order achieve flat response over wide bandwidth, the stagger tuning technique was utilized. The proposed LNA implemented by 0.15 μm GaAs pHEMT process, chip area i...

The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. A novel method of quartz tuning fork atomic force microscopy feedback has been used which provides extremely simple operation in atmospheric pressures, high-vacuum, and var...

Although practically all function blocks of the satellite navigation receivers are realized using the CMOS digital integrated circuits, it is appropriate to create a separate low noise antenna preamplifier based on a low noise pHEMT. Such an RF front end can be strongly optimized to attain a suitable tradeoff between the noise figure and transducer power gain. Further, as all the four principal...

As 10 Gbit/s long-distance optical communication systems become more and more pervasive, requirements rise relating to increased levels of performance, as well as the miniaturization of key devices that configure such systems. Lithium niobate (LN) modulators are used primarily as optical modulators that change high-speed electrical signals at 10 Gbit/s to optical signals for long-distance commu...