Fish-scale laser-etching and plasma electrolytic oxidation reduce corrosion produce better wear for common industrial alloy

During the fabrication of a MOS-HEMT, plasma-etching steps are critical because they can damage GaN materials and lead to electrical degradation effects. To address these limitations, we studied influence plasma parameters on in an AlGaN/GaN heterostructure. In this work, modifications induced by bias-voltage applied during SiN capping layer opening investigated. Physical (XRD, XRR, AFM TEM) ch...

Abstract: Graphene oxide nanowalls were prepared by casting an aqueous dispersion of polystyrene latex particles onto a graphene oxide film followed by tetrafluoromethane plasma etching. Mild plasma etching conditions allowed the oxygen functional groups on the graphene oxide nanowalls to be retained. It was found that exposure to a xenon light source of such graphene oxide nanowalls coated wit...

Plasma atomic layer etching is a dry process using dose step to modify material’s surface chemistry and an etch remove the modified layer. This method of has certain advantages over reactive ion due its self-limiting for highly controllable depth reduced roughness. In this paper, we expand upon anisotropic, plasma recipe used thin films silicon nitride, which uses H2 material SF6 surface. Sever...

The subthreshold swing, threshold voltage and hysteresis of PCDTPT OFETs can be in situ tuned by soft plasma etching.

This study investigates the suitability of Piezoelectric Direct Discharge Plasma as a tool for wetting behaviour modification PEEK and dentin, compares results this method with low-pressure plasma treatment phosphoric acid etching. Static contact angle measurements were made, roughness was assessed using tactile measurement, AFM SEM images taken. An optimum operating distance ≤15 mm determined ...

During the oxide layer etching process, particles in capacitively coupled plasma equipment adhere to wafer edge and cause defects that reduce yield from semiconductor wafers. To particle contamination equipment, we propose changes voltage temperature of electrostatic chuck, discharge sequence, gas flow, pressure parameters during process. The proposed reduction method was developed by analyzing...

The aim of this work is to demonstrate the “dry” etching based micro-fabrication technologies in the manufacturing of Single Crystal Silicon (SCS) for Micro-Electro/(Optical)-Mechanical-Systems (ME(O)MS). The ME(O)MS technology is very fast growing industry branch based often on the same silicon technology as integrated circuits. The process of plasma-dry etching is quite simple straightforward...

We have employed attenuated total reflection Fourier transforms infrared spectroscopy sATR-FTIRSd to monitor the profile evolution of patterned mesoporous, low-dielectric-constant SiO2 films in situ and in real time during plasma etching. A stack of patterned photoresist, anti-reflective coating, and mesoporous SiO2 is etched in an inductively coupled plasma reactor, using CHF3 and Ar. During e...