In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good ...

In the paper, a new physical principle for designing of a new optoelectronic device and its theoretical description are presented. The basic idea of the device consists in providing inside a multilayered semiconductor structure such conditions for photoelectrons that enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around p-n junctions of a re...

This paper presents a device proposal based on a junction between an absorbing semiconductor nanorod structure and another window semiconductor layer for solar cell application. The possibility of band gap tuning by varying the diameter of the nanorods along the length, higher absorption coefficient at nanodimensions, the presence of a strong electrical field at the nanorod-window semiconductor...

This paper presents the variation law of temperature in three-dimensional space, which is cooled by the refrigeration provided by the cold side of a semiconductor. The mathematical model of the temperature field of the semiconductor refrigeration device is described, and a numerical study on the temperature profile in a semiconductor refrigeration device was carried out using this model. The pr...

The electronics industry has recognized the significance of Electrostatic Discharge (ESD) as a potential source of damage, especially to semiconductor devices, for some time. During that time, there has been an ongoing effort to develop a meaningful human body ESD pulse and equipment which is capable of repeatedly applying that pulse at various voltage levels to a semiconductor device. The inte...

Investigating the reliability of a semiconductor device is time and cost consuming, but essential for industry and customers. To save resources, models that predict the lifetime and the valid parameter range dependent on the stress conditions are needed. The given semiconductor lifetime data show a mixture of two lognormal distributions [1], where the mixture weights of the two components depen...

Thermally drawn metal-insulator-semiconductor fibers provide a scalable path to functional fibers. Here, a ladder-like metal-semiconductor-metal photodetecting device is formed inside a single silica fiber in a controllable and scalable manner, achieving a high density of optoelectronic components over the entire fiber length and operating at a bandwidth of 470 kHz, orders of magnitude larger t...

The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is d...