This paper presents the root-mean-squared tracking error performance analysis of a class of coherent digital delay-locked loops for multicode direct sequence spread spectrum signals in bandlimited correlated Rayleigh fading channels. In the transmit side, multiple independent PSK-modulated data streams in the in-phase and qudrature phase branches are spread by short mutually orthogonal codes be...

We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET’s down to 0.07 m channel lengths both at low and room temperatures.

Extending WDM transmission distances between regenerators and increasing the channel bit-rates are required to achieve cost-effective terabit/s backbone networks. However, the achievable performance is limited the fibre nonlinearity, with high optical launch powers and short pulse widths leading to nonlinear distortion of the signals. In this paper, we report new results of splitstep Fourier si...

Advances in information and communication technology (ICT) have provided a platform for the introduction diffusion of range financial technologies that transformed sector. This study analyses (fintech) its interaction with inclusion living standards (GDP per capita). We consider determinants effects services identify two possible transmission mechanisms from sector to GDP capita – fintech chann...

Tubular channel angular pressing (TCAP) is a recently invented novel severe plastic deformation technique for producing UFG tubes. Plastic deformation analysis using the finite element method (FEM) was carried out to investigate the effects of trapezoidal channel geometry on strain inhomogeneity index (SII), strain level and required load compared to previously used channel geometries. The resu...

In this paper, quantum mechanical effects on nanoscale MOSFET devices are investigated through compact physical models. These models cover quantum mechanical influences on device parameters including long-channel threshold voltage shift, gate capacitance degradation, deteriorated short channel effects and sub-threshold slope. In-depth understanding of device characteristic modification brought ...