Using ab initio modeling we demonstrate that H atoms can break strained Si─O bonds in continuous amorphous silicon dioxide (a-SiO(2)) networks, resulting in a new defect consisting of a threefold-coordinated Si atom with an unpaired electron facing a hydroxyl group, adding to the density of dangling bond defects, such as E' centers. The energy barriers to form this defect from interstitial H at...

A solar cell based on the n-MoS2/i-SiO2/p-Si heterojunction is fabricated. The device exhibits a high power-conversion efficiency of 4.5% due to the incorporation of a nano-scale SiO2 buffer into the MoS2/Si interface. The present device architectures are envisaged as potentially valuable candidates for high-performance photovoltaic devices.

The anisotropic thermoelectric transport properties of bulk silicon strained in the [111]-direction were studied by detailed first-principles calculations focusing on a possible enhancement of the power factor. Electron and hole doping were examined in a broad doping and temperature range. At low temperature and low doping an enhancement of the power factor was obtained for compressive and tens...

Self-consistent full-band Monte Carlo simulations are employed to compare the performance of nanoscale strained-Si single-gate (SG) and unstrained-Si double-gate (DG) MOSFETs for a gate length of 25 nm. Almost the same on-current as in the DG-MOSFET can be achieved by strain in a SG-MOSFET for the same gate overdrive. This is due to the compensation of the higher electron sheet density in the t...

A new electron mobility model for strained-Si MOSFETs has been developed. The mobility increase produced by the strain in the silicon layer is accurately studied and described by means of simple analytical expressions. This model can be easily included in conventional device and circuit simulators. The need of a surface-roughness model dependent on the germanium mole fraction is highlighted. Th...

The rapid development of numerous microscale electronic devices, such as smart dust, micro or nano bio-sensors, medical implants and so on, has induced an urgent demand for integratable micro or nano battery supplies with high energy and power densities. In this work, 3D hexagonal bottle-like Si/Ge composite nanorod (NR) array electrodes with good uniformity and mechanical stability potentially...

We investigate the PL characteristics of the equivalent-size controlled Si-QDs by employing the nano-porous AAO membrane as the template for growing Si-rich SiOx nano-rods to achieve the spatially confined synthesis of Si-QD. The ultra-bright PL can be emitted from the SiOx nano-rod in nano-porous AAO membrane. In addition, we preliminarily demonstrate the in-situ high-temperature synthesis of ...