To judge about the performance of designed support system for tunnels, structural forces i.e. peak values of axial and shear forces and moments are critical parameters. So in this study, at first a complete database using finite element method was prepared. Then, a model of artificial neural network (ANN) using multi-layer perceptron was developed to estimate lining structural forces. Sensitivi...

This document defines the Tunnel Extensible Authentication Protocol (TEAP) version 1. TEAP is a tunnel-based EAP method that enables secure communication between a peer and a server by using the Transport Layer Security (TLS) protocol to establish a mutually authenticated tunnel. Within the tunnel, TLV objects are used to convey authentication-related data between the EAP peer and the EAP serve...

This work presents estimates of time histories of pressure coefficients at several taps on the roof of a 1/200 model of a 200 x 100 x 20 ft low-rise building with a 1/24 slope gable roof building. The estimates were obtained using a large eddy simulation (LES). The first and second moments as well as peaks for the time histories are compared with those obtained in boundary layer wind-tunnel mea...

The objective of obtaining a spatially standardized steady stream of air across and along the test section of a wind tunnel has been considered by several researchers. When a wind tunnel is manufactured or montage or move to another position, the study about variation of pressure, Mach number, density and temperature distribution, the variation of pitch and yaw components of flow angularity, bo...

The oxidation state at the interfaces of Nb/Al–AlOx/Pb junctions is discussed. Conductance–voltage curves below and above the superconducting temperature suggest tunneling conduction, while X-ray photoelectron spectroscopy shows the existence of a thin AlOx layer at the Nb/Al interface. We demonstrate that at the usual 10 7 Torr range of base pressures in the sputtering chamber, this is due to ...

Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel jun...

The zero bias anomaly (ZBA) of the tunnel conductivity are investigated in the Al/δ−GaAs tunnel structure with 2D electron concentration in δ-layer to be equal to 3.6∗10 cm−2. We find that the dip (ZBA) in the tunnel density of states near the Fermi level EF reveals logarithmic dependence on the energy ε in the range kT < ε< h̄/τ . Here ε is the energy relative to EF and τ is the elastic relaxat...

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven th...