The continuous scaling of MOSFET devices into the nanoscale regime requires refined models for electron transport. Coulomb interactions must be considered because of two reasons. First the Coulomb force is a long range force implying that both the short and the long range interactions must be included in a particle ensemble. Second the hot-carrier and short-channel effects will have a significa...

We report on detailed room-temperature transport properties of a 17 nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum...

Using first-principles method, we calculate the electronic band structure of biaxially strained silicon, from which we analyze the change in electron and hole effective mass as a function of strain and determine the mobility of electrons and holes in the biaxially strained silicon based on Boltzmann transport theory. We found that electron mobility increases with tensile strain and decreases wi...

The X-ray crystal structure of 1-(3-methoxy-carbonyl)-propyl-1-thienyl-[6,6]-methanofullerene (ThCBM) was determined and the electron mobility of the single crystal was measured using a TRMC method to reveal high electron mobility (2 cm(2) V(-1) s(-1)) along the long axis (a-axis) and its remarkable anisotropy (7 times).

A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0 .53Ga0 .47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility μn is around 370 cm2 /V·s at low Vg−Vth bias at room temperature and decreases with increasing Vg , and increases with i...

We study the influence of the image and exchange-correlation effects in double-gate silicon-on-insulator ~DGSOI! devices, in the calculation of both charge distribution and electron mobility. The image and exchange correlation potentials produce a greater confinement of the carriers and, according to the uncertainty principle, a greater phonon scattering rate, which produces a decrease in elect...

All-AlGaN based high electron mobility transistors (HEMTs) are promising for increasing the power density in both RF and devices, improving overall efficiency. Nitrogen (N) polar GaN/AlGaN HEMTs offer lower contact resistance compared to its metal-polar counterpart. In this work, we report metal organic chemical vapor deposition (MOCVD)-based growth of N-polar AlGaN channel HEMT structures with...

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