نتایج جستجو برای: epitaxy
تعداد نتایج: 8455 فیلتر نتایج به سال:
Low defect-mediated reverse-bias leakage in „0001... GaN via high-temperature molecular beam epitaxy
Conductive atomic force microscopy, scanning electron microscopy, and x-ray diffraction were used to determine the effects of Ga/N flux ratio on the conductivity of current leakage paths in GaN grown by molecular beam epitaxy. Our data reveal a band of fluxes near Ga /N 1 for which these pathways ceased to be observable. We conclude that changes in surface defects surrounding or impurities alon...
Atomically thin quasi-2D GaSe flakes are synthesized via van der Waals (vdW) epitaxy on a polar Si (111) surface. The bandgap is continuously tuned from its commonly accepted value at 620 down to the 700 nm range, only attained previously by alloying Te into GaSe (GaSex Te1- x ). This is accomplished by manipulating various vdW epitaxy kinetic factors, which allows the choice bet ween screw-dis...
Atomic-scale precision epitaxy of perovskite oxide superlattices provides unique opportunities for controlling the correlated electronic structures, activating effective control knobs intriguing functionalities including electromagnetic, thermoelectric, and electrocatalytic behaviors. In this study, we investigated close interplay between atomic structures synthesized by atomic-scale epitaxy. p...
The misfit dislocation formation related to plastic strain relaxation in Si or Ge quantum well layers SiGe heterostructures for spin qubits tends negatively affect the qubit behaviors. Therefore, it is essential understand and then suppress order achieve high-performance qubits. In this work, we studied propagation kinetics interactions by annealing strained grown molecular beam epitaxy. temper...
We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vert...
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