The present work aims at the design of 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with Gaussian doping profile in drift region for high breakdown voltages. By varying the device height ‘h’, function constant m and peak concentration N0, analysis has been done for an optimum profile for high breakdown voltage. With Gaussian profile peak concentration N0 ...

The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer another solid-state device that can be used to implement power switching control. This paper reviews differences between the standard and the newly developed FET. It shows the significant advantages that the conductivitymodulated FET has over the standard FET. Several applications ar...

The purpose of this part of the notes is to briefly review some of the prerequisite course materials related to characteristics of active device in microelectronic circuits. We summarize dc, large-signal and small-signal (incremental) models of two major types of active devices used in analog, digital and mixed-mode integrated circuits: metal-oxide-semiconductor field-effect transistors (MOSFET...

The high room-temperature carrier mobilities which have recently been observed for both electrons and holes in Si/SiGe heterostructures and the possibility of further improvements offer the prospect of silicon-based field effect transistors (FETs) with performances matching those of bipolar transistors and III–V modulation-doped FETs. In this article the electrical properties of this semiconduc...

Drift–diffusion model is applied for transport in a one–dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a long single–wall nanotube basing on a self–consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of w...

Low-doped silicon multi-nanowire field effect transistors with high ON/OFF ratio over 10 and a low subthreshold swing of 60–120 mV dec 1 are fabricated using lithographic semiconductor processes. The use of multi-nanowires instead of a single nanowire as sensing elements has shown improved device uniformity and stability in buffer solutions. The device stability is further improved with surface...

Low-doped silicon multi-nanowire field effect transistors with high ON/OFF ratio over 10(7) and a low subthreshold swing of 60-120 mV dec(-1) are fabricated using lithographic semiconductor processes. The use of multi-nanowires instead of a single nanowire as sensing elements has shown improved device uniformity and stability in buffer solutions. The device stability is further improved with su...

original article background and objectives: one type of electromagnetic fields, based on frequency range, is extremely low frequency (elf) fields. there are lots of reports about measuring elf- magnetic field (mf) in substations, power plants, cities, near high voltage power lines and etc. this study aimed to compare the difference between measurement of three-axis and single-axis probe mf mete...

n-channel organic thin film transistors (OTFTs) with field-effect mobility comparable to that typically reported for pchannel pentacene TFTs were fabricated on oxidized silicon wafers using N,N'-ditridecylperylene-3,4,9,10tetracarboxylic diimide (PTCDI-C13H27) as the semiconductor. Au, Cr, Al, and LiF/Al source and drain contacts were studied. Accumulation mode n-channel transistor operation wa...

Semiconductor technology has reached an end in the manufacture of conventional Metal Oxide semiconductor Field Effect Transistor (MOSFET). The continuous scaling of semiconductor devices has kept pace with Moore’s law and transistors below 1μm are grouped under deep sub-micron (DSM) technology node. But this trend seem to end beyond deep sub micron levels due to main design constraints such as ...