The multiple-input floating gate transistors were used to simplify the design of multiple valued logic. The Quasi-floating gate node have a well defined DC operating point. The multi-input quasi-floating gate is used for low voltage applications because its effective threshold voltage will be controllered to a low value.

In deep submicron CMOS and BICMOS technologies, antenna effects affect floating gate charge of usual floating gate test structures, dedicated to capacitor matching measurement. In this paper a new pseudo-floating gate test structure is designed. After test structure and modeling presentation, testing method and results are given for several capacitor layouts (poly-poly and metal-metal). key wor...

A low-voltage operational capability near 1 V along with low noise and distortion characteristics have been realized in a passive sigma-delta modulator. To achieve low-voltage operation, the dc voltage in signal paths in the switched-capacitor-filter section was set to be 0.2 V so that sufficient gate-to-source voltages were obtained for metal-oxidesemiconductor (MOS) switches in signal paths w...

In microelectronics, dimensionality miniaturization theoretically leads to reliability increase. However, an important concern in silicon technology is the effective reliability of MOS (metal-oxide semiconductor) devices such as MOSFETs (MOS field-effect transistors) and memory cells as they are scaled to smaller dimensions. Indeed, as the silicon dioxide (SiO2) in CMOS technology is thinned be...

This paper analyzes in detail the Fringing Induced Barrier Lowering (FIBL) in MOS transistors with high-K gate dielectrics using two-dimensional device simulations. We found that the device short channel performance is degraded with increase in gate dielectric permittivity(Kgate) due to an increase in the dielectric physical thickness to channel length ratio. For Kgate greater than Ksi, we obse...

A low voltage and power current differencing transconductance amplifier (CDTA) based on Floating gate MOSFET (FGMOS) Quasi-floating (QFGMOS) is presented. The use of QFGMOS eliminates confined in the floating gate, degraded gain-bandwidth product, silicon area etc. proposed circuits have been simulated using spice simulation software 180nm technology analog devices LtSpice XVII supply used for ...

OF THE DISCLOSURE A novel technique is disclosed for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device of the type having a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. In the preferred embodiment, t...

Abstract Two-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS 2 ), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept multifunctional MoS flash memory by combining channel with PEDOT:PSS floating layer. The proposed devices exhibi...