This paper presents a novel lownoise amplifier (LNA) for the 2 to 4.6 GHz applications. The LNA uses a circuit topology consisting of two gain stages with two feedback loops using ATF technology. The noise figure of this LNA varies from 1.5 to 5.4 dB, and its gain varies from 5 to 13 dB throughout the operating frequency band.The S11 and S21 simulated and measured results are presented, and sho...

A 5GHz low power consumption LNA has been designed here for the receiver front end using 90nm CMOS technology. The ‘current reuse’ technique has been used here to reuse the bias current for two amplifier stages stacked upon each other. An inverter type amplifier acts the second stage to a common source first stage thereby giving a good gain for the amplifier. The gain achieved is around 13dB wi...

In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression measurements are presented. No comparable HBT am...

Simulation of phase sensitive amplifier (PSA) of differential phase shift keying (DPSK) data signal in dual pump is presented. The PSA is designed and simulated using OptiSystem software. A dual pump PSA based on cascaded fiber optic parametric amplifier (FOPA) of 80Gbit/s DPSK data signal is investigated in detail on its gain and noise figure. Results show that PSA has higher gain and lower no...

The double-pass erbium-doped zirconia fiber amplifier (EDZFA) is proposed and demonstrated to provide a wide-band amplification as well as flat-gain operation in both the Cand L-band regions using only a single-gain medium. The proposed amplifier utilizes an erbium-doped zirconia fiber (EDZF) with erbium ion concentration of 2800 ppm as a gain medium. The medium is fabricated in a ternary glass...

A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth and is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18um RF CMOS process. The LNA gives 13.1dB gain; 9.1GHz 3dB bandwidth (3.1-12.2GHz) while consuming 13.9mW through a 1.8V supply. Over the 3.1...

We report the demonstration of a high-power single-side-pumped Yb:YAG planar waveguide amplifier seeded by an Yb:KYW femtosecond laser. Five passes through the amplifier yielded 700-fs pulses with average powers of 50 W at 1030 nm. A numerical simulation of the amplifier implied values for the laser transition saturation intensity, the small-signal intensity gain coefficient and the gain bandwi...

Design and simulation of 7 GHz CMOS wideband amplifier(CMOSWA) using a modified cascode circuit realized in 90-nm technology is presented here. The proposed system consists two stages, namely folded an inductively degenerated common source amplifier. experimented with without feedback network. This work discusses the performance variation as function reactive components, initial stage results 2...

A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz f t SiGe BiCMOS technology. Die size was 0.7×0.73 mm. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the hi...

A current amplifier is used to realize a voltage amplifier having an improved high frequency response and slew rate capability. It is shown that the closed loop bandwidth is independent of the closed loop voltage gain. The design and application of a unity gain and a high gain current amplifier to voltage signal processing circuits are given. The results demonstrate an efficient use of the inhe...