The characterization of circular pad GaAs detectors with guard rings fabricated at the University of Glasgow was performed in the Department of Physics of the Politecnico di Milano, with the use of the Politecnico's equipment and expertise. Current transient measurements were made for reverse and forward bias steps at room temperature. Current voltage curves were also obtained for the detectors...

The tremendous growth of communications systems in recent years has put a demand on the electronics industry to provide higher speed integrated circuits than are currently available with today's silicon technology. To help meet this demand, the electronics industry is developing new semiconductor materials such as gallium arsenide which already report clock frequencies of 1-3 GHz in GaAs integr...