The electrical properties of ZnIn2Se4 thin films grown on glass substrates by the flash evaporation technique at different substrate temperatures (Ts) ranging from 473-623 K are studied. The influence of substrate temperature (Ts) on the electrical characteristics such as resistivity (ρ), Hall coefficient (RH), carrier concentration (ɳ), and Hall mobility (μH) of ZnIn2Se4 thin films were studie...

SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room tem...

This paper introduces a new concept for the magnetic field in a Hall-effect thruster. The Magnetic Interference Hall Accelerator (MIHA) uses independent magnetic circuit elements to put its peak magnetic field outside its exit plane. As a result, the zone of minimum electron mobility is outside its exit plane, as well as its ion acceleration zone. Wall-effects are reduced, and ion bombardment o...

A comprehensive analysis of measurements supporting the presence of anomalous cross-field electron mobility in Hall plasma accelerators is presented. Nonintrusive laser-induced fluorescence measurements of neutral xenon and ionized xenon velocities, and various electrostatic probe diagnostic measurements are used to locally determine the effective electron Hall parameter inside the accelerator ...

This thesis is focused on fabrication and characterization of an InSb quantum well device. A Hall Bar device is manufactured and a Hall effect measurement is carried out. Values such as the electron density and the mobility are then extracted. The weak antilocalization peak is observed and the usual fitting model is shown not to apply to the data obtained. A rough estimation of spin-oribt energ...

We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increa...

Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferroma...

The two-dimensional metal forming at the interface between an oxide insulator and SrTiO_{3} provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a Sr...

The thermally activated behavior of the gate defined narrow Hall bars is studied by analyzing the existence of the incompressible strips within a Hartree-type approximation. We perform self-consistent calculations considering the linear response regime, supported by a local conductivity model. We investigate the variation of the activation energy depending on the width of samples in the range o...

1 In no els In this paper, we review and substantially develop the recently proposed ‘‘Microscopic Response Method,’’ which has been devised to compute transport coefficients and especially associated temperature dependence in complex materials. The conductivity and Hall mobility of amorphous semiconductors (ASs) and semiconducting polymers are systematically derived, and shown to be more pract...