This paper introduces future devices for multi-valued logic implementation. Quantum dot gate field effect transistor (QDGFET) works based on the change in threshold voltage due to stored charge in the quantum dots in the gate region. Quantum dot channel field effect transistor (QDCFET) produces more number of states in their transfer characteristics because of charge flow through the mini-band ...

In this paper we describe the tunneling junction model effect on silicon nanowire gate-allaround field effect transistor using CMOS 45 nm technology. Tunneling effects provides better subthreshold slope, excellent drain induced barrier lowering and superior ION-IOFF ratio.This paper demonstrates the gate controlled tunneling at source of Gate-all-around field effect transistor. Low leakage curr...

We report the realization of electrical coupling between neurons and depletion type floating gate (FG) p-channel MOS transistors. The devices were realized in a shortened 0.5 microm CMOS technology. Increased boron implant dose was used to form the depletion type devices. Post-CMOS processing steps were added to expose the devices sensing area. The neurons are coupled to the polycrystalline sil...

The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using computer-aided design simulation technology. DC characteristics, breakdown voltage, and power dissipation analyzed according to position, energy, types trap caused by effect. on-current is degraded 100% due defect, which generated near emitter–gate region. An acceptor-like with Ec ? 0...