conclusions schistosomiasis is one of the major tropical and communicable diseases in the eastern mediterranean region (emr). however, today it is eliminated in iran by schistosomiasis control practices. results on the basis of our results, using a national program for schistosomiasis control based on active and passive case finding, snail control programs, education of people, conducting train...

The phenomenal success of CMOS technology, and, then the progress of the information technology, can be attributed without any doubt to the scaling of the MOS transistor, which has been pushed during more than thirty years to increasingly levels of integration and per‐ formances. Then, MOSFETs have been fabricated always smaller, denser, faster and cheaper in order to provide ever more powerful...

The application of SiC-based strain-relaxed buffers (SRB) technology in gate-all-around (GAA) pMOS nanosheet transistors (NS-FETs) fabrication has been systematically investigated. TCAD simulation results show that SiC SRB can effectively enhance the p-channel stress, up to 3.8Gpa achieved without S/D parasitic RC degradation. Furthermore, introducing a wide-bandgap layer underneath NS-FET help...

We present a study of nonlinear gravity–capillary waves with surface forcing and viscous dissipation. Based on a viscous boundary layer approximation near the water surface, the theory permits the efficient calculation of steady gravity–capillary waves with parasitic capillary ripples. To balance the viscous dissipation and thus achieve steady solutions, wind forcing is applied by adding a surf...

Parasitic nematodes cause a massive worldwide burden on human health along with loss of livestock and agriculture productivity. Anthelmintics have been widely successful in treating parasitic nematodes. However, resistance is increasing, little known about the molecular genetic causes for most these drugs. The free-living roundworm Caenorhabditis elegans provides tractable model to identify gen...

We propose and demonstrate a novel Ge photodetector on silicon-on-insulator based on a junction field effect transistor structure, where the field-effect transistor gate is replaced by a Ge island with no contact on it. Light incident on the Ge switches on the device by altering the conductance of the Si channel through secondary photoconductivity. The device's sensitivity is also enhanced by a...

Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor dc characterization methods. A negative differential output resistance is observed for high dissipated power levels. An analytical formula for a source-drain current drop as a function of parasitic source resistance and threshold voltage changes is proposed to...

A simple yet realistic MOS model, namely the a-power law MOS model, is introduced to include the carrier velocity saturation effect, which becomes eminent in short-channel MOSFET’s. The model is an extension of Shockley’s square-law MOS model in the saturation region. Since the model is simple, it can be applied for handling MOSFET circuits analytically and can predict the circuit behavior in t...

-Two-dimensional analytical model for optically biased non-self-aligned and self-aligned short channel GaAs MESFETs is developed to show the photo effects on the Id–Vd characteristics. When light radiation having photon energy equal to or greater than the band gap energy of GaAs is allowed to fall, the drain current increases significantly as compared to dark condition due to photoconductive ef...

Local simulations of the magnetorotational instability (MRI) in accretion disks can exhibit recurrent coherent structures called channel flows. The formation and destruction of these structures may play a role in the development and saturation of MRI-induced turbulence, and consequently help us understand the time-dependent accretion behaviour of certain astrophysical objects. Previous investig...