This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. is first NUDA of Darlington topology designed with 0.1µm GaAs pHEMT process a transition frequency fT 130GHz. Gate microstrip line sections, drain and active device sizes were to obtain high gain large bandwidth from Monolithic Microwave Integrated Circuit (MMIC...

This paper presents the x-band 5-bit MMIC digital attenuator with low phase shift. Phase compensation techniques were used in the MMIC design to reduce the phase shift. This attenuator is fabricated with 0.2μm GaAs PHEMT process. Measurement results of the developed MMIC chips in the xband show that the 5-bit MMIC digital attenuator has 0.5dB resolution and 15.5dB dynamic attenuation range, inp...

Paper presents a Neural Network Modelling approach to microwave LNA design. To acknowledge the specifications of the amplifier, Mobile Satellite Systems are analyzed. Scattering parameters of the LNA in the frequency range 0.5 to 18 GHz are calculated using a Multilayer Perceptron Artificial Neural Network model and corresponding smith charts and polar charts are plotted as output to the model....

This paper reports a novel MMIC balanced sub-harmonic cold FET mixer for MVDS applications using 0.15mm GaAs pHEMT. The mixer, which includes a LO buffer amplifier, was optimized for highly linear upconversion performance in the 42-43.5GHz RF band, 19.520.5GHz LO band and 2.45-3.45 GHz IF band. A dedicated simulation method has been developed to optimize conversion loss and determine optimum ma...