The aim of study is to integrate decision making trial and evaluation laboratory (DEMATEL) into the theoretical extension of technology acceptance model (TAM2) to evaluate users’ behavioral intention to use while introducing a new etching plasma technology. The study used a case of the Taiwan plasma etching manufacturing industry as the example, adopted DEMATEL to calculate the causal relations...

In today's nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on mater...

We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameter...

Perfluorinated compounds ~PFCs!, gases which have large global warming potentials, are widely used in plasma processing for etching and chamber cleaning. Due to underutilization of the feedstock gases or by-product generation, the effluents from plasma tools using these gases typically have large mole fractions of PFCs. The use of plasma burn-boxes located downstream of the plasma chamber has b...

Etching high aspect ratio trenches (HART’s) in silicon is becoming increasingly important for MEMS applications. Currently, the most important technique is dry reactive ion etching (ME). This paper presents solutions for the most notorious problems during etching HART’s: tilting and the aspect ratio dependent etching effects such as bowing, RIE lag, bottling, and micrograss or black silicon. To...

High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resista...

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of dia...

We study the effects of plasma etching on the evolution of surface roughness of GaN and AlN. The etch-induced roughness is investigated using atomic force microscopy by systematically varying plasma power, chamber pressure, and Cl2 /Ar mixture gas composition. GaN etches three to four times more rapidly than AlN for identical plasma conditions. For both GaN and AlN, we find that the surface rou...

Atmospheric pressure air plasma has been used to treat grey cotton fabrics and the effect of treatment on their desizing and wettability properties is studied using the dielectric barrier discharge plasma with air and helium gas mixture. The weight loss due to etching has been determined by gravimetric method, the surface structure observed by SEM, the wettability studied by wicking action and ...

PDMS films of 10 μm thickness can be patterned within 30 min by combining dry etching to achieve substantially vertical sidewalls with wet etching to achieve high etch rates and to protect the underlying substrate from attack. Dry etching alone would have taken 5 h, and wet etching alone would produce severe undercutting. In addition, using either technique alone produces undesirable surface mo...