A new, comprehensive CAD-oriented modeling methodology for single and coupled interconnects on an Si–SiO2 substrate is presented. The modeling technique uses a modified quasi-static spectral domain electromagnetic analysis which takes into account the skin effect in the semiconducting substrate. equivalent-circuit models with only ideal lumped elements, representing the broadband characteristic...

Coronary artery disease (CAD) is a common health problem in Iranian population. ATP binding cassette transporter A1 (ABCA1) plays central role in the efflux of the cholesterol from peripheral tissues back to liver. Inactivation of ABCA1 by epigenetic change such as DNA methylation may contribute to the development of CAD. The present study investigated the association between promoter DNA methy...

Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...

When a sufficient high dose of energetic ions is implanted into a silicon crystal, irradiated zones of the crystal are transformed to an amorphous state. The thickness and spatial location of the amorphous layers determine the type of the extended defects and the number of point defects remaining in the silicon crystal after a recrystallization step. I t is believed that the lateral diffusion o...

The effect of various types radiation and heavy nuclear particles on VLSI fabricated using CMOS technologies for bulk silicon at a level 250–90 nm is analyzed. Developed certified test crystals (TC) are constructive-topological circuit solutions elements digital libraries, complex-functional RAM blocks peripheral mixed-signal designing radiation-hardened the “system-on-chip” (SoC) type category...

In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500V and drain current of 540mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5μm exhibited high threshold voltage up to +1V and transconductance of 140mS/mm along with frequency operation in Sband (∼3GHz). The prop...

Objectives: Few studies have evaluated the marginal fit of computer-aided design—computer-aided manufacturing (CAD-CAM) monolithic zirconia crowns fabricated through completely digital workflow; however, internal these restorations is not well known. The purpose this in vitro study was to evaluate and by using workflow, including intraoral scanner (IOS) scans, compare results those a semi-digit...