We investigated the morphological and structural change in silicon nanostructures embedded in the silicon oxynitride matrix. The study has been carried out on thin films thermally annealed at high temperature, after deposition at 400°C by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition (ECR‐ PECVD), under different deposition parameters. Our stud...

This Letter reports on the unusual diffusion behavior of Ge during oxidation of a multilayer Si/SiGe fin. It is observed that oxidation surprisingly results in the formation of vertically stacked Si nanowires encapsulated in defect free epitaxial strained SixGe1-x. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) shows that extremely enhanced diffusion of Ge ...

Deep level transient spectroscopy (DLTS) was performed on p-isotype Si/SiGe/Si Schottky barrier diodes in order to obtain the valence band offset between Si and SiGe. A single strained Sic,Gecs layer was placed in such a depth in Si so as to be able to fill and empty the quantized SiGe well during the transient capacitance procedure. Broad capacitance transient peaks were obtained and interpret...

This thesis presents work aimed at investigating the possible benefit of strained-Si/SiGe heterostructure MOSFETs designed for nanoscale (sub-50-nm) gate lengths with the aid of device fabrication and electrical measurements combined with computer simulation. MOSFET devices fabricated on bulk-Si material are scaled in order to achieve gains in performance and integration. However, as device dim...

We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to engineer the band structure of Ge to enhance the direct gap luminescence efficiency by increasing the injected electron population in the direct Gamma valley. Room-temperature EL ...

This paper discusses the future trends of CMOS devices on SOI wafers in Motorola. Much of the early work dealt with substrate and device development on SIMOX wafers [1, 2]. This kind of work continued as bonded SOI wafers became available [3,4]. When many of the early materials and device issues had been addressed, Motorola manufactured high performance microprocessors on SOI wafers in 2001. Bu...

We have grown strained Si quantum wells on relaxed Si0.7Ge0.3 buffer layers using vicinal ~118! silicon substrates. Compared to conventional ~001! substrates the surface is tilted by 10° towards the @110# direction resulting in terraces with step edges which run parallel to @11̄0#. The surface morphology of the layers shows ‘‘cross-hatching’’ characteristic of relaxed SiGe films grown on Si subs...

In this work, we have developed two different fabrication processes for relaxed Si1xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by “smart-cut” approach utilizing hydrogen implantation. Etch-back approach produces SGOI substrate with less defects in SiGe film, but the SiGe film uniformity is inferior. “Smart-cut” approach has better control on the SiGe...

High mobility III–V semiconductors, along with high-k gate dielectrics, are projected to be key ingredients in future complementary metal–oxide–semiconductor technology. Among these, In0.53Ga0.47As has been intensively studied for their advantages in high electron mobility over their Si-based counterparts. In0.53Ga0.47As metal–oxide–semiconductor field-effect transistors (MOSFETs) have been dem...

An approach for the controlled formation of thin strained silicon layers based on strain transfer in an epitaxial Si/SiGe/Sis100d heterostructure during the relaxation of the SiGe layer is established. He+ ion implantation and annealing is employed to initiate the relaxation process. The strain transfer between the two epilayers is explained as an inverse strain relaxation which we modeled in t...