In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 nm MOSFETs. The simulations have been performed using a three-dimensional (3-D) implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation ap...

This paper investigates the effect of lowering the supply and threshold voltages on the energy efficiency of CMOS circuits. Using a first-order model of the energy and delay of a CMOS circuit, we show that lowering the supply and threshold voltage is generally advantageous, especially when the transistors are velocity saturated and the nodes have a high activity factor. In fact, for modern subm...

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substr...

Although phase-change memory (PCM) offers promising features for a 'universal memory' owing to high-speed and non-volatility, achieving fast electrical switching remains a key challenge. In this work, a correlation between the rate of applied voltage and the dynamics of threshold-switching is investigated at picosecond-timescale. A distinct characteristic feature of enabling a rapid threshold-s...

The continuous scaling down of technology, there is the exponential increase in leakage current. The MTCMOS is an attractive design to reduce the leakage current in idle state. Sleep-to-Active mode transition is an important concern in MTCMOS circuit because it produces ground bounce noise. In this paper, Threshold Voltage tuning method with MTCMOS circuit is used to reduce the ground bounce no...

A new technique is offered as an alternative to extract the threshold voltage of MOSFETs. It defines the threshold at the transition from subthreshold -to-strong inversion operation. Besides its stronger physical foundation, the method provides greater noise and measurement error immunity than conventional methods because, instead of the differentiation operations required by those methods, it ...

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangul...

In this paper, the threshold voltage of fully depleted silicon on insulator device with geometry scale down below 100nm is investigated deeply. All the device simulations are performed using SILVACO Atlas device simulator. Several ways to control the threshold voltage are proposed and simulated. Threshold voltage changing with the silicon film thickness, channel doping concentration, gate oxide...

Gate bias-induced stress has been investigated on sexithiophene-based ransistors. It was found that both a negative and a positive threshold voltage shift can be induced. Temperature-dependent measurements show that there are two processes involved in the negative threshold voltage shift, one occurring at T ˜ 220 K and the other at T˜ 300 K. These two transition temperatures were interpreted in...

A process, voltage and temperature (PVT) sensors with dynamic voltage selection are proposed for environmental management in the ultra-low voltage dynamic voltage and frequency scaling (DVFS) system. The process and voltage (PV) sensors initially monitor the process variation. With known process information, PV sensors can real-time provide voltage variation status. The temperature sensor has s...