Despite the great amount of attention CH3NH3PbI3 has received for its solar cell application, intrinsic properties of this material are still largely unknown. Mobility of charges is a quintessential property in this aspect; however, there is still no clear understanding of electron transport, as reported values span over three orders of magnitude. Here we develop a method to measure the electro...

Density functional theory calculations were performed on 2,2'-diphenyl-5,5'-bithiazole (DPBT) and its derivatives. The dimer structures of the title compounds were optimized by a density functional theory method with dispersion energy being considered at the wB97XD/LanL2DZ level. Reorganization energies between the switch of neutral molecules and anion radicals, and the electron-transfer coupli...

This paper reports the studies of the inversion layer mobility in nand p-channel Si MOSFET's with a wide range of substrate impurity concentrations to 10l8 cm-"). The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (E,E) are examined. It is found that the universality of both the electron and hole mobilities does hold up...

The High Electron Mobility Transistor (HEMT) is a small geometry hetero-junction device that exploits the high electron mobility in an undoped region to achieve high speed operation. Hetero-junction is used to create a narrow undoped electron well which forms the channel for current flow. The electron mobility in the channel is found to be maximum due to the adequate presence of Indium quantity...

Modulation-doped semiconductor nanostructures exhibit extraordinary electrical and optical properties that are quantum mechanical in nature. The heart of such structures lies in the heterojunction of two epitaxially grown semiconductors with different band gaps. Quantum confinement in this heterojunction is a phenomenon that leads to the quantization of the conduction and the valence band into ...

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in b–Ga2O3 to <200 cm/V s at 300 K for donor doping densities lower than !10 cm. Despite similar electron effective mass of b–Ga2O3 to GaN, the electron mobility is !10" lower because of a massive Fr€ohlich interactio...

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, process...

In this work we present mobility models for electrons suitable for the drift-diffusion and the hydrodynamic transport models. The models describe specific effects, such as the negative differential mobility observed at high electric fields. The models are calibrated against Monte Carlo simulation results and experimental data for GaN, AlN, and InN. The models are suitable for implementation in ...