Related Articles The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots J. Appl. Phys. 111, 033510 (2012) Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures J. Appl. Phys. 111, 033103 (2012) Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Appl. Phys. Lett. 100, 052114 (2012) Growth and photolu...

Single-crystal atomic-layer-deposited (ALD) Y2O3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 ˆ 6 and GaAs(111)A-2 ˆ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the cr...

The kinetics associated with the breakdown of epitaxy at low temperatures are studied for growth onto a number of Si surfaces, including (OOl), (117), (115), and (113). These surfaces are all initially generated at trench edges on a single patterned substrate. Growth on each of these surfaces at low temperatures is shown to result in a well-defined crystalline-to-amorphous transition. The epita...

The III-V compounds and alloys have been studied for three decades. Until recently, these materials have been commercialized for only a few specialized optoelectronic devices and microwave devices. Advances in thin-film epitaxy techniques, such as liquid phase epitaxy and chemical vapor deposition, are now providing the ability to form good quality lattice-matched heterojunctions with III-V mat...

The effect of the gaseous medium composition on electrically conductive properties In 2 O 3 -Ga films obtained by halide vapor phase epitaxy has been studied. temperature range 100-550 o C, exhibit high sensitivity to H , NH and possess hyphen performance low base resistance. A qualitative mechanism for gases is proposed. Keywords: vapor-phase epitaxy, gas sensitivity.

Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the sol...

We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape, original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observ...

A molecular dynamics simulation of the initial stages of the gas-phase epitaxy of silicon on the silicon {100} symmetric dimer reconstructed surface has been performed. A diffusing adatom induced rearrangement of the surface reconstruction is proposed as the reaction which leads to good epitaxy. Surface diffusion is shown to play much less of a role in the reordering of the reconstruction induc...

If crystal structures can be viewed as repositories of information, then crystal surfaces offer a pathway by which this information can be used to grow new structures through the process of epitaxy. The information transfer process is one of self-organization, and the kinetic and energetic factors influencing this are complex. They include the relative strengths of the adsorbate-adsorbate and a...

Related Articles Deep levels in H-irradiated GaAs1-xNx (x<0.01) grown by molecular beam epitaxy J. Appl. Phys. 110, 124508 (2011) Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation J. Appl. Phys. 110, 113528 (2011) Emission spectroscopy of divalent-cation-doped GaN photocatalysts J. Appl. Phys. 110, 113526 (2011) High-quality {20-21} GaN layers on patterned...