This paper describes the details of a novel manufacturing process integration of CMOS (Complementary Metal-Oxide-Semiconductor) transistor architecture, which is incorporated into a sub-micron logic technology on 300mm wafers. As the gate length is scaling down, the spacer design for CMOS transistor becomes increasingly important especially for high performance. Experimental manufacturing proce...

original article   one type of electromagnetic fields, based on frequency range, is extremely low frequency (elf) fields. there are lots of reports about measuring elf-magnetic field (mf) in substations, power plants, cities and etc. this study aimed to compare the difference between measurement of three-axis and single-axis probe mf meters. elf-mf was measured by tes-1394 mf tester (three-axis...

We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing the two dimensional device simulator MEDICI in conjunction with the shot noise model of p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation resul...

In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good ...

The Field Effect Transistor (FET) is today the basic element of Very Large ScaIe Integrated (VLSI) digital systems. FETs are also used in analog circuits for high frequency (microwave) applications. Different types of FETs are the Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), the MEtal Semiconductor Field Effect Transistors (MESFETs) and the MOdulation Doped Field Effect Transis...

Semiconductor nanowires represent powerful building blocks for next generation bioelectronics given their attractive properties, including nanometer-scale footprint comparable to subcellular structures and bio-molecules, configurable in nonstandard device geometries readily interfaced with biological systems, high surface-to-volume ratios, fast signal responses, and minimum consumption of energ...

We report the fabrication and characterization of nanoscale silicon field effect transistors using nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, including 100 nm wire channels, 250-nm-diam quantum dots, and ring structures with 100 nm ring width, over a 232 cm lithography field with good unifor...

Superconductor–semiconductor–superconductor heterostructures are attractive for both fundamental studies of quantum phenomena in low-dimensional hybrid systems as well future high-performance low power dissipating nanoelectronic and devices. In this work, ultrascaled monolithic Al–Ge–Al nanowire featuring monocrystalline Al leads abrupt metal–semiconductor interfaces used to probe the low-tempe...