Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300 “C plasma enhanced chemical vapor deposition (PECVD) SiO, film. This treatment is highly reproducible due to computer control of process parameters and long-lasting due to the SiOz cap. Improved C-V characteristics were...

Articles you may be interested in Plasmonic light trapping in an ultrathin photovoltaic layer with film-coupled metamaterial structures Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study Appl. The effects of temperature on the key parameters of a prototype GaAs 55 Fe radioisotope X-ray microbattery were studied ...

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Three-inch (100) gallium arsenide wafers were bonded to (1102) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 ◦C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close to the fracture energy of the bulk material. The bond energy was measured as a function of the temperature. Since the thermal ...

Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30%) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP2). The high-efficiency GaAsbased solar cells are being produced on a commercial scale, particularly for spa...

Abstract The advancement in technology semiconductor materials significantly contributed improvement of human life by bringing breakthrough fabrication optoelectronics and power devices which have wide applications medicine communication. Gallium Arsenide (GaAs) Nitride (GaN) are versatile for such but with relative merits demerits. GaAs transistors suitable both narrowband wideband due to very...

A GaAs-GaAlAs injection laser has been tested that confines light in the lateral dimension (normal to junction plane) by a multilayer Bragg reflector. In the past, light has been confined as a result of the higher-index guiding region and resulting evanescent fields.

Zinc selenide (ZnSe) a II-VI compound semiconductor with cubic zinc blende structure and a direct bandgap of 2.7 eV is found to be a very promising material for optoelectronic devices (Venkatachalam et al., 2007a). Semiconductor heterostructures employing zinc selenide and related alloys are an option for the production of optoelectronic devices emitting in the blue – green spectral range (Haas...