This work presents the general operation and the near exit plane velocity field of the Stanford Linear Hall thruster in a high vacuum environment. The ionized propellant velocities were measured using laser induced fluorescence of the excited state xenon ionic transition at 834.7 nm. Ion velocities were interrogated from the channel exit plane to a distance 30 mm from it. Both axial and transve...

A simple model is presented for the time-averaged electron mobility within a Hall thruster. The model is predicated on the experimental evidence for isentropic electron flow and, when used in a one-dimensional simulation, captures plasma properties that are in reasonable agreement with experiment.

Narrow-gap semiconductors have been used for decades in the fabrication of magnetic field sensors, such as magnetoresistors and Hall sensors. Magnetic field sensors are, in turn, used in conjunction with permanent magnets to make contactless potentiometers and rotary encoders. This sensing technology offers the most reliable way to convert a mechanical movement into an electrical signal, and is...

An InSb Schottky detector, fabricated from an undoped InSb wafer with Hall mobility which is higher than those of previously employed InSb wafers, was used for alpha particle detection. The output pulse of this InSb detector showed a very fast rise time, which was comparable with the output pulses of scintillation detectors.

This paper studies human capital investment in a spatial setting with interpersonal complementarities. A mixture of local and global social interactions affect the cost of acquiring education, and the return to human capital is determined endogenously in the market. We study how spatially segregated investment equilibria are affected by an increase in the relative importance of global vis-á-vis...

Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as germanium. In this paper, we explore the use of strain and heterostructure design guided by bandst...

Deliberate dopant compensation has proven to be an effective way to control ingot resistivity, although the impact of compensation on carrier recombination and mobilities remains under investigation. This paper summarizes recent findings regarding the carrier transport properties of compensated silicon. The capacity of common mobility models to describe compensated silicon is reviewed and compa...