In this paper, a 2.4GHz low power downconversion mixer with high linearity for direct-conversion receivers based on a standard 0.18um CMOS technology is proposed. In the circuit design, Gilbert cell architecture and Common-Gate configuration are used. A simple buffer is applied in the IF output. Simulation results show that the mixer can operate at 2.4GHz and obtain the conversion gain of 11.08...

In this work, we present a design and simulation of low power consumption down conversion Gilbert-Cell mixer, in the 1.9 GHz wireless application. The circuit is in a 65 nm – CMOS technology at a supply voltage of 1.8 V. The obtained results show a third order input intercept point (IIP3) and a Noise Figure in the order of 1.7 dBm and 3.13 dB respectively, when the conversion gain equal to 13.9...

A 2.4 GHz CMOS RF front-end using for ZigBee application is described. The front-end consists of a low noise amplifier and a down-mixer and uses a 2 MHz IF frequency. A common source with resistive feedback and an inductive degeneration are adopted for a low noise amplifier, and a 20 dB gain control step is digitally controlled. A passive mixer for low current consumption is employed. The RF fr...

In this paper, the significance of linearity for UWB front-end circuit is discussed. The effects of strong narrow band interferer on UWB signal are investigated. Wideband linearization techniques for UWB LNA are first proposed in this work. A high linearity UWB LNA is designed in TSMC 0.18μ CMOS process The simulation results show that the designed LNA exhibits very high IIP3 (6.9~13.8 dBm) whi...

Two techniques are presented in this paper for a software-defined radio (SDR) receiver robust to out-of-band interference. Voltage gain is realized at IF simultaneously with low-pass filtering to mitigate blockers and out-of-band intermodulation distortion. A 2-stage polyphase harmonic rejection (HR) mixer concept robust to gain error achieves 2-6 HR of more than 60dB for 40 samples without tri...

This paper presents a new ultra-wideband LNA which employs the complementary derivative superposition method in noise cancellation structure. A pMOS transistor in weak inversion region is employed for simultaneous second- and third-order distortion cancellation. Source-degeneration technique and two shunt inductors are added to improve the performance at high frequencies. The degeneration induc...

In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-...

ABSTRACT: A low power ultra wide band down conversion mixer is presented briefly in this paper. In this design, transistors are biased to operate in weak-inversion region so as to reduce the total power consumption of the mixers. The proposed circuit uses source-driven topology and has been designed using 0.18μm standard RF CMOS process. The simulated result shows a total power consumption of 1...