We have studied the lattice sites of Er in CZ Si single crystals by using conversion electron emission channeling from the isotope Er (2.28 s) which is the decay product of radioactive Tm (9.25 d). Following 60 keV implantation of Tm at a dose of 4×10 cm and annealing at 600°C, more than 90% of Er is found close to tetrahedral insterstitial (T) sites. The tetrahedral fraction of Er decreases co...

We report on the lattice location of Er in Si using the emission channeling technique. The angular distribution of conversion electrons emitted by the decay chain 167Tm st1y2 ­ 9.25 dd ! 167mEr s2.27 sd was monitored with a position-sensitive detector following room temperature implantation and annealing up to 950 ±C. Our experiments give direct evidence that Er is stable on tetrahedral interst...

Implantation of 1.0 MeV ‘isIn in Si results in secondary-defect formation during subsequent 900 “C annealing if the total number of displaced Si atoms is greater than 1.6~ lOi’/ cm’, achieved with a dose near 1.5 X 10i3/cm2. We demonstrate, though, that higher total In doses can be introduced without forming secondary defects by repetitive subthreshold implants each followed by an anneal to rem...

In this paper we study the relationships existing between total measurability in variation and Gould type fuzzy integrability (introduced and studied in [21]), giving a special interest on their behaviour on atoms and on finite unions of disjoint atoms. We also establish that any continuous real valued function defined on a compact metric space is totally measurable in the variation of a regula...

Electroluminescence at 1.28mum is observed in a nanopatterned silicon test structure that has been subjected to carbon implantation followed by solid-phase epitaxial regrowth for recrystalization. The sub-bandgap luminescence comes from a di-carbon complex known as 'G center'. Enrichment of silicon with carbon atoms has been achieved in a procedure consisting of two implantations and solid-phas...

in this paper, we report the synthesis and characterization of a new symmetric macroacyclic schiff base ligand (h2l) and related complexes with different metals. (h2l) was synthesized by the one pot condensation reaction of 2-[2-(2-formyl phenoxy)ethoxy]benzaldehyde and 2-aminobenzenethiol in a 1:2 molar ratio. the acyclic schiff base was characterized by ir, nmr spectroscopy and elemental anal...

Type-II (end of range) defects, produced by Ge+ implantation, were investigated as possible “detect0rs” for quantifying nonequilibrium interstitial concentrations following Bt implantation into silicon. The type-11 damage was created with a 100 keV ( 1 x 1015/cm2) Get implant into silicon followed by either a low-temperature (550 “C) or a high-temperature (800 “C) anileal. This resulted in the ...