A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The ef...

a comprehensive study of schottky barrier mosfet (sbmosfet) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within non-equilibrium green's function formalism. quantum confinement increases the effective schottky barrier height (sbh). (100) orientation provides lower effective schottky barrier height in comparison ...

We propose a threshold-logic gate device consisting of subthreshold MOSFET circuits. The device performs threshold-logic operation, using a technique of current addition and subtraction. To examine the operation of the device, we designed sample subsystems, adders, based on majority logic and confirmed their operation by computer simulation. The device has a simple structure and operates at low...

With CMOS scaling into the Sub-100nm regime, the supply and the threshold voltages need to be scaled proportionately. This necessitates addressing of low power CMOS device design issues. The idea of a Dynamic Threshold MOSFET (DTMOS), without the associated substrate loading effects, is a key to addressing the problems associated with device scaling for low power CMOS. This work focuses on the ...

© 2012 ETRI Journal, Volume 34, Number 1, February 2012 Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance an...

In this paper, we compare a new 1.2 kV rated 4H-SiC split-gate (SG) MOSFET with the conventional planar-gate (PG) MOSFETs. Both structures were fabricated same design rules and process platform. Therefore, have similar electrical parameters, such as ON-state drain-source resistance (RON), breakdown voltage (BV), threshold (Vth), body diode forward (VSD). It is shown that Ciss/Coss/Crss capacita...

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKVformalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An i...

The aims of this study were to characterize reinforced metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low-dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivit...

| Inverse modeling is a promising approach to know device structures made in experiments. We show our inverse modeling approach and its e ciency by demonstrating accurate extraction of deep submicron MOSFET structures. We also show that our approach can predict device performance to optimize its structure for required speci cation.

This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters of DH-DD-TM-SG MOSFET. Y have been modeled using different small-signal equivalent circuit parameter which is used to find the Scattering parameters. These further employed computing S-parameters. are investigate microwave performance proposed device. The Unilateral Power Gain and maximum oscillation f...