Satellite-cellular convergence promises to enable higher millimetre-wave bandwidth (data rate); beamformed better signal alignment (higher system efficiency); multi-connectivity data rates); and new use cases (verticals). Harnessing these opportunities will depend on overcoming challenges spanning shorter distance/reduced coverage component complexity; construction of antenna array over-the-air...

This paper mainly introduces the Wideband 5-bit MMIC digital attenuator with high precision. Firstly, the theories of basic GaAs digital attenuator MMIC’s configurations are searched. Secondly, every possible configuration is contrasted, subsequently, appropriate topology is selected for each stage. This attenuator has been realized by 0.5!m GaAs pHEMT process. Simulation results of the digital...

Low Noise Amplifiers (LNAs) amplify weak signals received by the antenna in communication systems. Every wireless system module typically consists of one or several LNAs. Applications include GPS receivers, wireless data systems, satellite communication, cellular handsets, radio systems, etc. The low noise in the receive chain is reduced by the gain of the LNA and therefore its function is prim...

This work presents a monolithic DC~4GHz 6-bit digital attenuator with low insertion phase shift and attenuation error. Based on GaAs E/D pHEMT process, a serial-to-parallel converter is introduced to decrease the control pads of the chip. In the 16dB attenuation bit, a switched-path-type topology is employed in order to extend the bandwidth and achieve low insertion phase shift. The attenuator ...

Schottky diodes may be realized by various techniques, depending on application and processing technology. M/ACOM has recently developed an enhancement/depletion (E/D) pHEMT process, used primarily for control circuits around its mature RF circuitry. We report here a reliability study of two diodes (configured using E-FETs), subjected to both high temperature and forward bias accelerated stress...

This work provides comparative studies of a double -doped Al0.3Ga0.7As/InxGa1−xAs/GaAs symmetrically graded x = 0.15 → 0.2 → 0.15 doped-channel field-effect transistor DD-DCFET with respect to a conventional double -doped pseudomorphic high electron mobility transistor pHEMT and a conventional DCFET structure. All threes samples, grown by the low-pressure metallorganic chemical vapor deposition...

A compact double-balanced monolithic star mixer for Kaband applications using 0.25μm GaAs pHEMT process is presented. With multi-coupled lines technology, the proposed dual 180◦ hybrid is produced and applied to a star mixer successfully. The proposed hybrid adopts the power divider and two types of multi-coupled lines to improve the return loss and isolation at the balance outputs of a traditi...

This letter proposes an ultra-wideband switched T-type phase shifter, which covers the whole X/Ku band. The proposed shifter integrates a filter compensation structure, achieving flat relative shift in broadband, conventional one cannot acquire. In addition, designed can further reduce error and improve capability with greater than 45°. Employing architecture, 90° is fabricated 0.15-μm GaAs pHE...

Abstract A high-performance 3–6 GHz monolithic digital control attenuator chip is designed by using a 0.25 μm GaAs pHEMT process. The circuit adopts cascade structure of 6 basic attenuation units, and 64 states are formed controlling the on-state combination different bits, connected in parallel to resistor given. main simulation results show that digitally controlled takes 0.5dB as step, maxim...

This paper proposes a novel 8–18 GHz 90° switched T-type phase shifter (TPS). In contrast to the conventional TPS, proposed TPS adds compensation capacitance greatly enhance shifting capacity. Moreover, designed structure also integrates filtering network, which can effectively achieve flat relative shift in wide band. The is fabricated using 0.15 μm GaAs pHEMT technology. achieves homogeneous ...