High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 for the first time. The strained Si channels were sandwiched between Sio.7Geo.3 layers, which, in turn, were deposited on Sio.7Geo.3 virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was comp...

In this article, we report on the visible absorption, photoluminescence (PL), and fast PL decay dynamics from freestanding Si nanocrystals (NCs) that are anisotropically strained. Direct evidence of strain-induced dislocations is shown from high-resolution transmission electron microscopy images. Si NCs with sizes in the range of approximately 5-40 nm show size-dependent visible absorption in t...

We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed ~as experimentally observed!. However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi , due t...

a r t i c l e i n f o Misfit defects in strained-SiGe layers grown on (100) Si-substrates by reduced pressure chemical vapor deposition (RPCVD) were investigated by using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). While (004) omega rocking curve (ω-RC) is not sensitive to 60° misfit dislocations in a slightly strain-relaxed sample, they caused an asymm...

First-principles optical-response calculations of oxidized and strained Si structures are presented. Local Si lattice deformations accompanying the oxidation of Si bulk bonds cause pronounced optical anisotropies that account very well for the reflectance difference signal measured during oxide growth Yasuda et al., Phys. Rev. Lett. 87, 037403 2001 . In contrast, calculations for various energe...

The SiGe/Si material system is recently a subject of increased research interest, since it provides beneficial band structure and transport properties due to strain. Monte Carlo method is used for analyzing these properties. Special focus is put on the description of the anisotropic majority/minority electron mobility in strained Si layers as a function of doping, electric field, and material c...

Nano-scale vacuum channel transistors possess merits of higher cutoff frequency and greater gain power as compared with the conventional solid-state transistors. The improvement in cathode reliability is one of the major challenges to obtain high performance vacuum channel transistors. We report the experimental findings and the physical insight into the field induced crystalline-to-amorphous p...

We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on SixGe1 x MOSFET’s with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.