In this paper, the modeling and evaluation of multibank SRAM design with dynamic threshold and supply voltage control is presented to reduce leakage power. The bank of SRAM, the unit of control, is put in sleep mode (high threshold voltage and low supply voltage) from active mode (low threshold voltage and high supply voltage) whenever it is not frequently used. The change of modes is based on ...

The global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL), gate leakage current, threshold voltage and their correlations are considered. Two threshold voltage extraction techniques were used. It is shown that the tra...

An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters...

The sub-threshold R-MOSFET resistor structure which enables tuning range extension below the threshold voltage in the MOSFET with moderate to weak inversion operation is analyzed in detail. The principal operation of the sub-threshold resistor is briefly described. The analysis of its characteristic based on approximations of a general MOS equation valid for all regions is given along with disc...

MOSFET’S subjected to large-signal gate+ource voltage pulses on microsecond to millisecond time scales exhibit transient threshold voltage shifts which relax over considerably longer periods of time. This problem is important in highaccuracy analog circuits where it can cause errors at the 12 b level and above. In thk paper, transient threshold voltage shifts are characterized with respect to t...

We demonstrate a novel algorithm for assigning the threshold voltage to the gates in a digital random logic complementary metal—oxide—semiconductor (CMOS) circuit for a dual-threshold voltage process. The tradeoff between static and dynamic power consumption has been explored. When used along with device sizing and supply voltage reduction techniques for low power, the proposed algorithm can re...

GABA(A) receptors are found on the somatodendritic compartment and on the axon initial segment of many principal neurons. The function of axonal receptors remains obscure, although it is widely assumed that axonal receptors must have a strong effect on excitability. We found that activation of GABA(A) receptors on the dentate granule neuron axon initial segment altered excitability by depolariz...

nergy-efficient near-threshold design has been proposed to increase energy efficiency across a wide range of applications. This article first provides a background motivating near-threshold and how it differs from super-threshold and subthreshold operation. Next, state-of-the-art near-threshold techniques are summarized that help overcome barriers to near-threshold adoption, namely high variati...