in this paper, we study fuzzy substructures in connection withhv-structures. the original idea comes from geometry, especially from thetwo dimensional euclidean vector space. using parameters, we obtain a largenumber of hyperstructures of the group-like or ring-like types. we connect,also, the mentioned hyperstructures with the theta-operations to obtain morestrict hyperstructures, as hv-groups...

0

we study a new class of $h_v$-structures called fundamentally very thin. this is an extension of the well known class of the very thin hyperstructures. we present applications of these hyperstructures.

We study a new class of $H_v$-structures called Fundamentally Very Thin. This is an extension of the well known class of the Very Thin hyperstructures. We present applications of these hyperstructures.

In this paper, we study fuzzy substructures in connection withHv-structures. The original idea comes from geometry, especially from thetwo dimensional Euclidean vector space. Using parameters, we obtain a largenumber of hyperstructures of the group-like or ring-like types. We connect,also, the mentioned hyperstructures with the theta-operations to obtain morestrict hyperstructures, as Hv-groups...

In humans, hyperventilation (HV) has various effects on systemic physiology and, in particular, on neuronal excitability and synaptic transmission. However, it is far from clear how the effects of HV are mediated at the cortical level. In this study we investigated the effects of HV-induced hypocapnia on primary motor (M1) and visual cortex (V1) excitability. We used 1) motor threshold (MT) and...

Satellite RNAs (satRNAs) are sub-viral agents that may interact with their cognate helper virus (HV) and host plant synergistically and/or antagonistically. SatRNAs totally depend on the HV for replication, so satRNAs and HV usually evolve similar secondary or tertiary RNA structures that are recognized by a replication complex, although satRNAs and HV do not share an appreciable sequence homol...

We have developed several kinds of HV MOS devices whose device structures and doping levels in the offset regions differ depending on the specifications of the devices. We have developed the bi-directional HV MOS device (e.g., it can be used as a bi-directional MOS switch) with both drain and source offset regions, and we previously described its SPICE model [4] – [5] based on BSIM3v3 [1] – [3]...