We use the combination of high-resolution electron microscopy and density-functional theory to study the atomic structure and electronic effects of grain boundaries in polycrystalline photovoltaic materials such as Si, CdTe, CuInSe2, and CuGaSe2. We find that grain boundaries containing dislocation cores create deep levels in Si, CdTe, and CuGaSe2. Surprisingly, however, they do not create deep...

The chemical composition of the CuInSe2 /CdS heterojunction interface is investigated by angle resolved x-ray photoelectron spectroscopy, Auger electron spectroscopy, and secondary ion mass spectroscopy in combination with selective etching of CdS. We demonstrate that ;0.8 monolayer of Cd is incorporated into the first 1–3 atomic layers of the CuInSe2 . This is accompanied by significant Cu dep...

Using rst-principles self-consistent electronic structure theory, we have calculated defect formation energies and defect energy levels in CuInSe2. Contrary to previously accepted assumptions in the analysis of defects in CuInSe2 we nd that (i) it is much easier to form Cu vacancy in CuInSe2 than to form cation vacancies in II-VI's. (ii) Defect formation energies vary considerably both with the...

CuInSe2 nanoparticles were successfully deposited on the surface of TiO2 nanotube arrays (NTAs) by a solvothermal method for photocathodic protection (PCP) metals. Compared with NTAs, CuInSe2/TiO2 composites exhibited stronger visible light absorption and higher photoelectric conversion efficiency. After 316 Stainless Steel (SS) was coupled CuInSe2/TiO2, potential SS could drop to −0.90 V. The ...

Quantum dots (QDs) with core/shell (c/s) type configurations are promising candidates for photovoltaic (PV) applications, as they known to enhance the QD stability, and also expected reduce charge carrier recombination both by reducing trap states increasing separation. Hence, here we report detailed first-principles studies of different compositions c/s QDs made from nontoxic materials, namely...

CuInSe2 nanoparticles have been prepared by reacting cuprous chloride, indium chloride with alcohol and selenium powder. The nanoparticles were characterized by TEM, XRD, ICP-OES and SEM. The formation of CuInSe2 nanoparticles with different precursor ratios was investigated by in-situ high temperature X-ray diffraction analysis. It was found that the growth of CIS followed a vapor-liquid-solid...

Formation of CuInSe2 (CIS) thin films from aqueous solution containing citrate as complexing agent is reported. The surface morphology and the composition of the deposited films are characterized by scanning electron microscopy (SEM). The texture of the deposits and their compositions are analyzed by X-ray diffraction and transmission electron microscopy (TEM). Annealing of the films at 350°C i...

The interface formation between epitaxial CuInSe2(112) films and ZnO deposited by metal-organic MBE is investigated by photoelectron spectroscopy. Reaction of diethyl-zinc with CuInSe2 leads to the formation of an intrinsic ZnSe layer and copper-depletion of the interface. This is associated with Zn doping of the chalcopyrite surface and a Fermi level shift towards the conduction band. The impl...

Thin film CdTe and CuInSe2 based solar cells have reported efficiencies of over 15% and 17% respectively for small area laboratory devices and over 10% for prototype modules. In the present article, an approach to translate laboratory results to the development of large scale module manufacturing facilities is discussed, and critical issues associated with the development of CuInSe2 and CdTe th...

CuInSe2 is a direct bandgap material that assumes the chalcopyrite structure (space group I4̄2d). Due to its large optical absorption coefficient (α ∼ 10 cm−1), its use in thin film polycrystalline solar cells is an active research topic. As most of the research effort to date has been applied directly to polycrystalline film formation for use in solar cell applications and relatively little att...