Plasmon-induced hot carrier formation is attracting an increasing research interest due to its potential for applications in photocatalysis, photodetection and solar energy harvesting. However, despite very significant experimental effort, a comprehensive theoretical description of the hot carrier generation process is still missing. In this work we develop a theoretical model for the plasmon-i...

We report evidence of nonequilibrium hot carrier extraction from graphene by gate-dependent photocurrent study. Scanning photocurrent excited by femtosecond pulse laser shows unusual gate dependence compared with continuous wave (CW) laser excitation. Power dependence studies further confirm that the photocarriers extracted at the metal/graphene contact are nonequilibrium hot carriers. Hot carr...

We discuss the recently devised one-loop gap equation for the magnetic mass of hot QCD. An alternative, and one would hope equivalent, gap equation is presented, which however shows no mass generation at the one-loop level.

Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. D...

For radical designs the hot-carrier reliability is an important issue. This creates the need for the numerical simulation of hot-carrier induced degradation. From a design point of view, the goal of the degradation simulation will be the hot-carrier aging simulation for the prediction of device lifetime. This simulation requires a complicated set of physical models, which includes the hot-carri...

Hot-carrier solar cells can overcome the Schottky-Queisser limit by harvesting excess energy from hot carriers. Inorganic semiconductor nanocrystals are considered prime candidates. However, hot-carrier harvesting is compromised by competitive relaxation pathways (for example, intraband Auger process and defects) that overwhelm their phonon bottlenecks. Here we show colloidal halide perovskite ...

Hybrid plasmonic metal-graphene systems are emerging as a class of optical metamaterials that facilitate strong light-matter interactions and are of potential importance for hot carrier graphene-based light harvesting and active plasmonic applications. Here we use femtosecond pump-probe measurements to study the near-field interaction between graphene and plasmonic gold nanodisk resonators. By ...

The degradation of 100 nm effective channel length pMOS transistors with 14 A equivalent oxide thickness JVD Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concem. Hot-carrier reliability of 14 A Si3N4 transistors is compared to reliability of...

The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed Vdd; asymmetric LDD devices exhibit higher Idsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd while higher Idsat is retained. For t...