This work describes the development of an integrated biosensor based on phototransistor integrated circuits (IC) for use in medical detection, DNA diagnostics, and gene mapping. The evaluation of various system components developed for an integrated biosensor microchip is discussed. Methods to develop a microarray of DNA probes on nitrocellulose substrate are discussed. The biochip device has s...

Molybdenum disulfide (MoS2) has attracted a great attention as an excellent 2D material for future optoelectronic devices. Here, a novel MoS2 tribotronic phototransistor is developed by a conjunction of a MoS2 phototransistor and a triboelectric nanogenerator (TENG) in sliding mode. When an external friction layer produces a relative sliding on the device, the induced positive charges on the ba...

Curved image sensors, which are a key component in bio-inspired imaging systems, have been widely studied because they can improve an imaging system in various aspects such as low optical aberrations, small-form, and simple optics configuration. Many methods and materials to realize a curvilinear imager have been proposed to address the drawbacks of conventional imaging/optical systems. However...

Intensity of the sun be an important parameter to determine potential energy in any region. Nowdays, measurement solar intensity as a panel tracker use many variety sensors. Phototransistor is one light sensors that has greater sensitivity compared other The design system uses four phototransistor which are placed each two east and west panel. Accuracy testing calculated by comparing results on...

Infrared phototransistors based respectively on a quantum-well and a quantumwire structures, utilizing intersubband electron transitions, are considered using developed analytical model. The dark currents and re~~onsivities of the phototransistors in question are compared. It is shown that the quantum-wire infrared phototransistor can surpass the infrared phototransistor with a quantum well in ...

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-off current ratio of 10⁵, subthreshold swing of 0.8 V/decade, and m...

This article presents the results of our research on modeling an HPT SiGe heterojunction phototransistor. Usually this HPTs type work for a single point polarization in work, we were interested same different points polarization. We will model to operate at both 2V and 3V, so that can use multiple bias reduce costs allow reuse SiG phototransistor further studies. For defined optimize operation ...

High-gain photodetectors with near-infrared (NIR) sensitivity are critical for biomedical applications such as photoplethysmography and optical coherence tomography where detected optical signals are relatively weak. Current photodetection technologies rely on avalanche photodiodes and photomultipliers to achieve high sensitivity. These devices, however, require a high operation voltage and are...

A phototransistor with a field-effect transistor configuration was fabricated using a single zinc octaethylporphyrin (ZnOEP) nanorod; the device showed ability in signal amplification and reversible light-controlled switching.