The paper presents methods for the online estimation of the junction temperature (Tj) for IGBT modules with paralleled semiconductor chips, with each chip operating at different junction temperatures. Experimental and simulation results are presented. The Tj estimated from the gate-emitter voltage (Vge) during the IGBT switch off process was found to be very close to the average junction temper...

The simplest semiconductor junction that is used in solar cells for separating photogenerated charge carriers is the p-n junction, an interface between the p-type region and ntype region of one semiconductor. Therefore, the basic semiconductor property of a material, the possibility to vary its conductivity by doping, has to be demonstrated first before the material can be considered as a suita...

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

An analysis of the electronic properties of amorphous semiconductor–electrolyte junction is reported for thin (Dox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor–electrolyte junction (a-SC/El) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb2O5/El interface in a large ra...

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical impo...