where ∆T and q are the temperature drop and heat flux across the interface. Predicting the thermal boundary resistance of semiconductor/semiconductor interfaces is important in devices where phonon interface scattering is a significant contributor to the overall thermal resistance (e.g., computer chips with high component density). Such predictions will also lead to improvements in the design o...

we propose a new generation of unbiased (bias-free) antenna-less cw thz photomixer emitters array made of asymmetric msm gratings with subwavelength pitch, operating in optical near-field regime. we take advantage of the size effects in near-field optics and electrostatics to demonstrate the possibility of enhancing the thz power by four orders of magnitude, as compared with a similar array of ...

A metal-ferroelectric-semiconductor (MFS) structure was used as a nonlinear capacitor in a series resonance circuit. The following materials were used as components of the MFS structure: aluminium as the metal electrode, Bi4Ti3O12 film as the ferroelectric, and p-type silicon as the semiconductor. The system was driven by a single frequency at suitably chosen amplitudes. Besides the sequences o...

Herein we study propagation of surface waves at a boundary of an isotropic media and a multilayered hyperbolic metamaterial. The structure dispersion is discussed for various cases of a hyperbolic metamaterial. It is demonstrated that it is possible to tune the frequency range of surface waves by varying the thickness of dielectric sheets. It is also shown that this frequency range can be broad...

Semiconductor nanowires are possible candidates to replace the metal-oxide-semiconductor field-effect transistors (MOSFET) since they can act both as active devices or as device connectors. In this article, the transmission coefficients of Si and GaAs nanowires with arbitrary transport directions and cross sections are simulated in the nearestneighbor sp3d5s∗ semi-empirical tight-binding method...